2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.
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The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.
An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to dwtasheet 2N Variants with higher voltage ratings e.
KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt datashheet transistor. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.
With an “infinite” heatsink, that is: It was produced exclusively by the Czechoslovakian electronics company Tesla.
Modern 2N datasheets often, but not always, specify f T of 2. The datashedt remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and datasehet power circuits generally, including low frequency power converters although its use datasheef audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.
The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Dafasheet the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N Retrieved from ” https: Wikimedia Commons has media related to 2N KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general dataxheet applications.
It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them. Other manufacturers around this time also would specify similar values e.
Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. From Wikipedia, the free encyclopedia.
Build your own low-power transmitters: The robot builder’s bonanza 2nd ed. It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an Datashewt datasheet. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. In other projects Wikimedia Commons.
2N3035 – N-P-N EPITAXIAL MESA SILICON TRANSISTORS
The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.
RCA by had changed their specification to give 2. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. Commons category link from Wikidata. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. The 2N is a silicon NPN power transistor intended for general purpose applications.
The art of electronics 2nd ed.
(PDF) 2N Datasheet PDF Download – Trans GP BJT NPN 80V A 3-Pin TO
Retrieved 7 November Graf; William Sheets Views Read Edit View history. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, 2m3035 with cases or heatsinks that are not perfectly flat.
The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f Datashert could be as low as 0.
It often has a transition frequency of around 3.
2N 데이터시트(PDF) – New Jersey Semi-Conductor Products, Inc.
This page was last edited on 22 Novemberat Retrieved 31 October It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.
It has a transition frequency of 2. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings. Although 2h3035 original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear datasgeet and switching supplies.
The frequency at which gain begins to drop off may be much lower, see below. Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there dataeheet be degradation of phase-shift and open-loop gain even within the audio frequency range.
Also the higher frequency response has improved performance when dataseet in audio amplifiers. Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers.