Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.

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Customers using or selling Vishay products not expressly indicated for rif710 in such applications do so at their own risk. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. Product names and markings noted herein may be trademarks of their respective owners.

IRF Datasheet(PDF) – Vishay Siliconix

Drain Current Current regulator Same type as D. B, Mar This datasheet is subject to change without notice.

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in adtasheet injury or death. Products may be manufactured at one of several qualified locations. Please note that some Vishay documentation may still make reference to the IEC definition.

B, Mar 7 8 9 10 Fig.

IRF, SiHF Datasheet

Such statements are not binding statements about the suitability of products for a particular application. Repetitive rating; pulse width limited by maximum junction temperature see fig.

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The low thermal adtasheet and low package cost of the TOAB contribute to its wide acceptance throughout the industry.

The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Case Temperature td off tf tr Fig.

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