Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.
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Customers using or selling Vishay products not expressly indicated for rif710 in such applications do so at their own risk. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. Product names and markings noted herein may be trademarks of their respective owners.
IRF Datasheet(PDF) – Vishay Siliconix
Drain Current Current regulator Same type as D. B, Mar This datasheet is subject to change without notice.
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B, Mar 7 8 9 10 Fig.
IRF, SiHF Datasheet
Such statements are not binding statements about the suitability of products for a particular application. Repetitive rating; pulse width limited by maximum junction temperature see fig.
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The low thermal adtasheet and low package cost of the TOAB contribute to its wide acceptance throughout the industry.
The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Case Temperature td off tf tr Fig.
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